JPH0560690B2 - - Google Patents

Info

Publication number
JPH0560690B2
JPH0560690B2 JP61122788A JP12278886A JPH0560690B2 JP H0560690 B2 JPH0560690 B2 JP H0560690B2 JP 61122788 A JP61122788 A JP 61122788A JP 12278886 A JP12278886 A JP 12278886A JP H0560690 B2 JPH0560690 B2 JP H0560690B2
Authority
JP
Japan
Prior art keywords
bipolar transistor
base
transistor
auxiliary
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61122788A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62279711A (ja
Inventor
Toshio Shigekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP61122788A priority Critical patent/JPS62279711A/ja
Publication of JPS62279711A publication Critical patent/JPS62279711A/ja
Publication of JPH0560690B2 publication Critical patent/JPH0560690B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
JP61122788A 1986-05-28 1986-05-28 複合半導体装置 Granted JPS62279711A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61122788A JPS62279711A (ja) 1986-05-28 1986-05-28 複合半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61122788A JPS62279711A (ja) 1986-05-28 1986-05-28 複合半導体装置

Publications (2)

Publication Number Publication Date
JPS62279711A JPS62279711A (ja) 1987-12-04
JPH0560690B2 true JPH0560690B2 (en]) 1993-09-02

Family

ID=14844634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61122788A Granted JPS62279711A (ja) 1986-05-28 1986-05-28 複合半導体装置

Country Status (1)

Country Link
JP (1) JPS62279711A (en])

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58526U (ja) * 1981-06-26 1983-01-05 スタンレー電気株式会社 スイツチング用トランジスタ回路装置
US4423357A (en) * 1982-06-21 1983-12-27 International Business Machines Corporation Switchable precision current source
JPS5975718A (ja) * 1982-10-25 1984-04-28 Stanley Electric Co Ltd トランジスタスイツチング回路
JPS6045532U (ja) * 1983-09-06 1985-03-30 株式会社東芝 トランジスタ回路

Also Published As

Publication number Publication date
JPS62279711A (ja) 1987-12-04

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